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Pressure-Driven Two-Step Second-Harmonic-Generation Switching in BiOIO3.

Dequan Jiang1, Huimin Song2, Ting Wen1

  • 1Center for High Pressure Science and Technology Advanced Research (HPSTAR), Beijing, 100094, China.

Angewandte Chemie (International Ed. in English)
|December 29, 2021
PubMed
Summary

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This summary is machine-generated.

Researchers discovered pressure-induced, two-step second-harmonic-generation (SHG) switching in BiOIO3. This controllable multi-stability offers potential for advanced information storage and switch devices.

Area of Science:

  • Materials Science
  • Solid State Physics
  • Crystallography

Background:

  • Materials exhibiting multi-stability controllable by external stimuli are crucial for advanced information storage and switching applications.
  • Polar materials with non-linear optical properties are of significant interest for optoelectronic devices.

Purpose of the Study:

  • To investigate pressure-driven switching phenomena in polar BiOIO3.
  • To explore the potential of BiOIO3 for multi-state information storage and switching devices.

Main Methods:

  • In situ high-pressure powder second-harmonic-generation (SHG) measurements.
  • Polarization-dependent single-crystal SHG measurements.
  • In situ Raman spectroscopy and X-ray absorption spectroscopy for local structure analysis.
Keywords:
High PressureLone-Pair ElectronNonlinear OpticsPhase TransitionSwitching Material

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Main Results:

  • Observed pressure-driven, two-step SHG switching in BiOIO3 for the first time.
  • Identified two pressure-induced phase transitions: noncentrosymmetric (SHG-high) to intermediate noncentrosymmetric (SHG-intermediate) to centrosymmetric (SHG-off).
  • Determined that SHG switching is due to the stepwise suppression of lone-pair electrons on [IO3]- units, affecting optical absorption.

Conclusions:

  • BiOIO3 exhibits controllable three-state SHG switching under pressure.
  • The observed phenomenon is attributed to pressure-induced structural changes and the behavior of lone-pair electrons.
  • Switchable multi-stable materials like BiOIO3 are promising for next-generation electronic devices.