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Imine Metathesis by Silica-Supported Catalysts Using the Methodology of Surface Organometallic Chemistry
Published on: October 18, 2019
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Alkanes versus Oligosilanes: Conformational Effects on σ-Electron Delocalization
Milena Jovanovic1, Josef Michl1,2
1Department of Chemistry, University of Colorado, Boulder, Colorado 80309-0215, United States.
Journal of the American Chemical Society
|December 29, 2021
Summary
Alkanes and oligosilanes exhibit different sigma-electron delocalization due to electronegativity. Silicon
Area of Science:
- Computational Chemistry
- Materials Science
- Organic Chemistry
Background:
- Understanding sigma-electron delocalization in saturated chains is crucial for predicting molecular properties.
- Alkanes (CnH2n) and oligosilanes (SinnH2n+2) are isoelectronic and isosteric analogues, offering a comparative study platform.
- Conformational dependence of electronic structure influences chemical reactivity and physical characteristics.
Purpose of the Study:
- To investigate and compare the conformational dependence of sigma-electron delocalization in alkanes and oligosilanes.
- To elucidate the underlying electronic reasons for the observed differences in delocalization behavior.
- To develop an intuitive model for understanding these conformational effects.
Main Methods:
- Analysis of approximate algebraic solutions using a Hückel-level extended ladder Hamiltonian model.
- Utilized the effective mass of a hole as a quantitative measure of sigma-electron delocalization.
- Model parametrization involved fitting to results from density functional theory (DFT) and Hartree-Fock (HF) calculations.
Main Results:
- Significant differences in the extent and conformational dependence of sigma-electron delocalization were observed between alkanes and oligosilanes.
- Two delocalization modes identified: conformation-sensitive skeletal delocalization (X-X bonds) and less sensitive lateral delocalization (X-H bonds).
- Alkanes show delocalization in all conformations due to complementary modes; oligosilanes primarily exhibit skeletal delocalization of holes, strongly dependent on conformation.
Conclusions:
- The differing electronegativity between silicon and hydrogen, compared to carbon and hydrogen, is the primary reason for the distinct delocalization patterns.
- A simplified ladder model adequately describes the strong conformational dependence in oligosilanes.
- This study provides fundamental insights into the electronic structure of silicon-based materials and their conformational flexibility.
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