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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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Radiative dynamics and delayed emission in pure and doped InP/ZnSe/ZnS quantum dots.

Paul Cavanaugh1, Haochen Sun1, Ilan Jen-La Plante2

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|January 1, 2022
PubMed
Summary
This summary is machine-generated.

Indium phosphide/zinc selenide/zinc sulfide quantum dots (QDs) with excess indium exhibit slower photoluminescence (PL) decay due to indium-based hole traps. These traps influence radiative dynamics and lifetime, depending on shell thickness and core-shell interface quality.

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Area of Science:

  • Materials Science
  • Quantum Dot Research
  • Optoelectronics

Background:

  • Quantum dots (QDs) are semiconductor nanocrystals with tunable optical properties.
  • Core/shell QD structures enhance stability and performance.
  • Understanding radiative dynamics is crucial for QD applications.

Purpose of the Study:

  • To investigate the impact of excess indium on the radiative dynamics of InP/ZnSe/ZnS core/shell/shell quantum dots.
  • To correlate indium distribution and core-shell interface properties with photoluminescence (PL) kinetics.
  • To elucidate the role of indium-based hole traps in QD luminescence.

Main Methods:

  • Time-correlated single photon counting (TCSPC) for luminescence kinetics analysis.
  • Resonance Raman spectroscopy to probe core-shell interface characteristics.
  • Synthesis of InP/ZnSe/ZnS QDs with varying indium content and core treatments.

Main Results:

  • Stoichiometric QDs show fast, single-exponential PL decay (28-32 ns).
  • QDs with excess indium exhibit slower PL rise and decay (up to 48 ns) due to indium-based hole traps.
  • Core treatments influence interface quality, affecting trap dynamics and PL decay times.

Conclusions:

  • Excess indium in InP/ZnSe/ZnS QDs introduces optically dark indium-based hole traps.
  • These traps significantly alter radiative dynamics, increasing PL lifetime.
  • Interfacial strain and indium distribution are key factors controlling QD luminescence properties.