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Updated: Oct 8, 2025

Ultrafast Time-resolved Near-IR Stimulated Raman Measurements of Functional π-conjugate Systems
Published on: February 10, 2020
A tunable Raman system based on ultrafast laser for Raman excitation profile measurement
Wei-Xia Luo1, Xue-Lu Liu1, Xue Chen1
1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Abstract:
The measurement of the Raman excitation profile (REP) is of great importance to obtain the energies of van Hove singularities and the lifetime of the excited state involved in the Raman process of semiconductors. In this Note, we develop a simple tunable Raman system based on an ultrafast laser and tunable Raman filters for REP measurement. The system is testified by measuring REP of twisted bilayer graphene, and the corresponding energy of van Hove singularity is determined.
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