A novel method to detect wafer-bonding energy using function fitting
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Updated: Oct 8, 2025

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
Published on: January 9, 2014
Jianhan Fan1, Kaiming Yang2, Yu Zhu3
1College of Mechanical and Electrical Engineering, University of Electronic Science and Technology of China, Chengdu 610036, China.
Abstract:
The bonding energy is an important parameter to evaluate the quality of bonded wafers in the semiconductor industry. The most important currently used method to measure the bonding energy is the so-called crack opening method. Unfortunately, the infrared cameras used for the wafer inspection with this method have limiting resolutions, and the derived direct crack length reading error is relatively large. To solve the reading error and adaptability problems, in this study, we improve upon the conventional image processing method and propose a crack length identification method that uses function fitting. The effectiveness and feasibility of the method are verified through experiments.

