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Related Experiment Video

Updated: Oct 7, 2025

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
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Programming Semiconductor Nanowire Composition with Sub-100 nm Resolution via the Geode Process.

Maritza Mujica1, Amar Mohabir1, Pralav P Shetty2

  • 1School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.

Nano Letters
|January 6, 2022
PubMed
Summary

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This summary is machine-generated.

The Geode process enables scalable manufacturing of semiconductor nanowires, including silicon-germanium alloys. This method maintains nanoscale control without heat or mass transport limitations, proving effective for complex nanowire structures.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Semiconductor nanowires are crucial for advanced electronic and optoelectronic devices.
  • Existing manufacturing methods face challenges in scalability and precise control.
  • The Geode process offers a novel approach for nanowire fabrication.

Purpose of the Study:

  • To demonstrate the vapor-liquid-solid growth of various semiconductor nanowires using the Geode process.
  • To evaluate the scalability and nanoscale programmability of the Geode process.
  • To assess the impact of microcapsule confinement on heat and mass transport for nanowire growth.

Main Methods:

  • Utilized the Geode process for vapor-liquid-solid growth of nanowires.
  • Grew single-crystalline intrinsic silicon (i-Si), i-Si/n-Si, and silicon-germanium (SiGe) nanowires.
Keywords:
germaniumnanomanufacturingnanowiressiliconvapor−liquid−solid

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  • Employed microcapsule powders with varying diameters and wall thicknesses.

    • Main Results:

    • Successfully grew i-Si, i-Si/n-Si, and SiGe nanowires within microcapsules.
    • Demonstrated negligible heat and mass transport limitations due to the microcapsule wall.
    • Achieved precise compositional control and minimal structural variations in nanowires.
    • Fabricated nanowires with over 16 segments and segment lengths below 75 nm.

    Conclusions:

    • The Geode process significantly enhances the scalability of semiconductor nanowire manufacturing.
    • Microcapsule confinement does not impede critical transport phenomena for nanowire growth.
    • The Geode process offers a viable platform for producing complex, precisely controlled nanowire architectures.