Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Unsymmetric Bending01:18

Unsymmetric Bending

509
Unsymmetrical bending occurs when the bending moment applied to a structural member does not align with its principal axis. This misalignment leads to complex stress distributions and deflection patterns that differ from those in symmetrical bending, and are essential for designing structures to withstand different loading conditions. In unsymmetrical bending, the neutral axis—where stress is zero—does not necessarily align with the geometric axes of the cross-section. The...
509

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Collective photon emission and ferroelectric exciton ordering near Mott insulating state in WSe<sub>2</sub>/WS<sub>2</sub> heterobilayers.

Nature materials·2026
Same author

Switchable Chern Insulators and Competing Quantum Phases in Rhombohedral Graphene Moiré Superlattices.

Physical review letters·2025
Same author

Coulomb Blockade and Possible Luttinger Liquid Behaviors in Encapsulated High-Mobility Graphene Nanoribbons.

Nano letters·2025
Same author

Homochiral carbon nanotube van der Waals crystals.

Science (New York, N.Y.)·2025
Same author

Graphene nanoribbons grown in hBN stacks for high-performance electronics.

Nature·2024
Same author

Author Correction: Spontaneous broken-symmetry insulator and metals in tetralayer rhombohedral graphene.

Nature nanotechnology·2024

Related Experiment Video

Updated: Oct 7, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

7.6K

In-situ twistable bilayer graphene.

Cheng Hu1, Tongyao Wu1, Xinyue Huang1

  • 1Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China.

Scientific Reports
|January 8, 2022
PubMed
Summary

Researchers developed in-situ twistable bilayer graphene (tBLG) devices. This innovation allows continuous, precise twist angle tuning within a single device for advanced twistronics research.

More Related Videos

Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding
14:52

Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding

Published on: September 23, 2018

9.1K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.6K

Related Experiment Videos

Last Updated: Oct 7, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

7.6K
Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding
14:52

Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding

Published on: September 23, 2018

9.1K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.6K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Twisted bilayer graphene (tBLG) exhibits electrical and optical properties highly sensitive to the twist angle between its constituent graphene monolayers.
  • Current research on angle-dependent properties necessitates fabricating numerous samples with discrete twist angles, a laborious and inefficient process.

Purpose of the Study:

  • To develop a novel in-situ twistable bilayer graphene (tBLG) device.
  • To enable continuous and high-precision tuning of the twist angle within a single device.
  • To facilitate systematic investigations of twist angle-dependent phenomena in tBLG.

Main Methods:

  • Fabrication of an in-situ twistable bilayer graphene homostructure.
  • In-situ continuous tuning of the twist angle over a large range with high precision.
  • Characterization using atomic force microscopy (AFM) for lattice orientation, scanning near-field optical microscopy (SNOM) for superlattice domain walls, and resonant Raman spectroscopy for G-mode analysis.

Main Results:

  • Successful construction of a device allowing in-situ, continuous twist angle modulation of bilayer graphene.
  • Confirmation of controlled twist angle tuning through AFM, SNOM, and Raman spectroscopy.
  • Demonstration of the device's capability for systematic, single-device studies of twist angle effects.

Conclusions:

  • The developed in-situ twistable tBLG device offers a significant advancement over traditional multi-sample fabrication methods.
  • This technology enables efficient and precise exploration of twist angle-dependent properties.
  • The device is poised to accelerate research in the field of twistronics.