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Related Concept Videos

Molecular and Ionic Solids02:54

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
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Updated: Oct 7, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Solid-Ionic Memory in a van der Waals Heterostructure.

Jieqiong Chen, Rui Guo1, Xiaowei Wang

  • 1Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore.

ACS Nano
|January 10, 2022
PubMed
Summary
This summary is machine-generated.

Engineered defect states in a novel MoS2/BiFeO3/SrTiO3 heterostructure enable bifunctional memory. This solid-ionic gating device offers multibit electrical storage and optoelectronic functionalities, paving the way for advanced nanoelectronics.

Keywords:
BiFeO3MoS2multifunctional memoryoxygen vacancysolid-ionic transistor

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid-State Physics

Background:

  • Defect states critically impact low-dimensional nanoelectronic device performance.
  • Defect engineering is emerging as a strategy to unlock novel functionalities in electronic devices.
  • Oxygen vacancies are key to manipulating ionic gating in heterostructures.

Purpose of the Study:

  • To demonstrate a bifunctional memory device utilizing a MoS2/BiFeO3/SrTiO3 van der Waals heterostructure.
  • To investigate the potential of oxygen-vacancy-based solid-ionic gating for device control.
  • To explore the device's capabilities for both electrical memory and optoelectronic applications.

Main Methods:

  • Fabrication of a MoS2/BiFeO3/SrTiO3 van der Waals heterostructure.
  • Implementation of oxygen-vacancy-based solid-ionic gating for programming and erasing.
  • Characterization of electrical memory performance (multibit capability, dynamic range).
  • Evaluation of optoelectronic properties including photoresponse under different light stimuli.

Main Results:

  • Demonstrated a bifunctional memory device controllable by light or electrical-gate pulses.
  • Achieved multibit electrical memory storage (>22 bits) with a large dynamic range (7.1 × 10^6).
  • Showcased light-programmable (green/red) and UV-erasable functionalities.
  • Observed high photoresponsivity (6.7 × 10^4 A/W) and photodetectivity (2.12 × 10^13 Jones) under red-light illumination.

Conclusions:

  • Solid-ionic gating via engineered oxygen vacancies enables multifunctional control in heterostructure devices.
  • The demonstrated MoS2/BiFeO3/SrTiO3 device exhibits promising characteristics for advanced electronic and optoelectronic applications.
  • Defect engineering offers a viable pathway for developing next-generation memory and sensing technologies.