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UV-enhanced NO2sensor using ZnO quantum dots sensitized SnO2porous nanowires
Tianchen Jiang1, Xin Liu2, Jianbo Sun1
1The Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, People's Republic of China.
Abstract:
ZnO quantum dots sensitized SnO2porous nanowires were fabricated and designed for UV excitation gas sensor. The ZnO/SnO2composite (SZQ1%) with the molar proportion of 1:100 exhibits excellent sensing properties to NO2gas under UV irradiation at 40 °C. The limits of detection of the SZQ1% sensor is 100 ppb. The humidity stability of SZQ1% was also measured and discussed by DC reversed circuit and complex impedance curves. The gas sensing mechanism is well discussed and illustrated to the ZnO quantum dots sensitized and the increased photo-generated carriers under UV irradiation.
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