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Behavior of E. coli with Variable Surface Morphology Changes on Charged Semiconductor Interfaces.

Divya Iyer¹, Alexey V Gulyuk², Pramod Reddy³

¹Department of Nanoscience, Joint School of Nanoscience and Nanoengineering, University of North Carolina-Greensboro, Greensboro, North Carolina 27401, United States.

ACS Applied Bio Materials

|January 13, 2022

Summary

Genetic modification of Escherichia coli surface structures altered bacterial behavior on gallium nitride surfaces. Changes in flagella, fimbriae, and lipopolysaccharide affected adhesion and sensitivity to semiconductor interfaces.

Keywords:

E. coli Kelvin probe force microscopy UV light catalase cell adhesion gallium nitride membrane potential

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Area of Science:

Microbiology
Materials Science
Genetics

Background:

Bacterial cell wall structures critically influence behavior and interactions.
Semiconductor surfaces, like gallium nitride (GaN), present unique interfaces for microbial study.

Purpose of the Study:

To investigate how genetic alterations in Escherichia coli surface structures affect its behavior on GaN surfaces.
To determine the impact of specific mutations (flagella, fimbriae, curli, LPS) on bacterial adhesion and response to GaN.

Main Methods:

Utilized genetically modified Escherichia coli strains with altered surface architectures.
Examined bacterial adhesion, membrane potential, and catalase activity on GaN surfaces with varying potentials.
Characterized both bacterial and semiconductor surface properties prior to experiments.

Main Results:

Altering E. coli surface structures significantly changed bacterial behavior on GaN.
Loss of certain surface structures reduced bacterial sensitivity to GaN interfaces.
Specific mutations enhanced bacterial adhesion compared to wild-type E. coli.

Conclusions:

Bacterial behavior and responses to GaN semiconductor materials can be genetically controlled.
Genetic manipulation offers a method to tune the interaction and fate of bacteria on GaN surfaces.