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Updated: Oct 6, 2025
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Performance enhancement of an N-polar nitride deep-ultraviolet light-emitting diode with compositionally graded
Abstract:
Highly efficient hole injection into a AlGaN quantum well is desirable in nitride deep-ultraviolet light-emitting diodes (DUV LEDs) for high optical performance. In this work, we report the observation of enhanced hole injection in the N-polar AlGaN-based DUV LEDs with compositionally graded p-AlxGa1-xN (x = 0.65-0.75) by simulation and show that the enhanced hole injection leads to the increase of the peak internal quantum efficiency (IQE) and the significant reduction of efficiency droop at high current density. This work might activate researchers to realize the efficient polarization p-type doping of N-polar AlGaN with high Al content and thus to achieve high performance DUV LEDs experimentally.
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