Characterizing and Improving the Thermal Stability of Organic Photovoltaics Based on Halogen-Rich Non-Fullerene
Kan Ding1, Yongxi Li2, Stephen R Forrest1,2,3
1Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, United States.
Abstract:
The thermal stability of inverted, halogen-rich non-fullerene acceptor (NFA)-based organic photovoltaics with MoO as the hole transporting layer is studied at temperatures up to 80 °C. Over time, the power conversion efficiency shows a "check-mark" shaped thermal aging pattern, featuring an early decrease, followed by a long-term recovery. A high Cl concentration at the bulk heterojunction (BHJ)/MoO interface in the thermally aged device is found using energy dispersive X-ray spectroscopy. X-ray photoelectron spectroscopy shows that the MoO is chlorinated after thermal aging. With bulk quantum efficiency analysis, we propose an explanation to the check-mark shaped pattern. Inserting a thin C70 layer between the BHJ and MoO suppresses the thermal degradation mechanisms, resulting in three orders of magnitude increase in device lifetime at 80 °C.
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