Aluminum Doping Effects on Interface Depletion Width of Low Temperature Processed ZnO Electron Transport Layer-Based
Muhammad Adnan1, Muhammad Usman1,2, Saqib Ali1
1Department of Materials Engineering, School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad, Pakistan.
Abstract:
Rapid improvement in efficiency and stabilities of perovskite solar cells (PSCs) is an indication of its prime role for future energy demands. Various research has been carried out to improve efficiency including reducing the exciton recombination and enhancement of electron mobilities within cells by using electron transport material (ETM). In the present research, electrical, optical, and depletion width reduction properties of low temperature processed ZnO electron transport layer-based perovskite solar cells are studied. The ZnO thin films vary with the concentration of Al doping, and improvement of optical transmission percentage up to 80% for doped samples is confirmed by optical analysis. Reduction in electrical resistance for 1% Al concentration and maximum conductivity 11,697.41 (1/Ω-cm) among the prepared samples and carrier concentration 1.06×1022 cm-3 were corroborated by Hall effect measurements. Systematic impedance spectroscopy of perovskite devices with synthesized ETM is presented in the study, while the depletion width reduction is observed by Mott Schottky curves. IV measurements of the device and the interfacial charge transfer between the absorber layer of methylammonium lead iodide and ETM have also been elaborated on interface electronic characteristics.
