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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
556
Field Effect Transistor01:29

Field Effect Transistor

650
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
650
Characteristics of MOSFET01:17

Characteristics of MOSFET

539
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
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Biasing of FET01:22

Biasing of FET

386
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
386
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

512
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

360
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Updated: Oct 5, 2025

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
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Influence of Injection Barrier on Vertical Organic Field Effect Transistors.

Drona Dahal1, Pushpa Raj Paudel1, Vikash Kaphle1

  • 1Department of Physics, Kent State University, Kent, Ohio 44242, United States.

ACS Applied Materials & Interfaces
|January 25, 2022
PubMed
Summary

Optimizing vertical organic field-effect transistors (VOFETs) involves managing the source injection barrier. Increasing this barrier reduces leakage current but also lowers device performance, highlighting a critical trade-off.

Keywords:
injection barrierleakage currenton/off ratioorganic semiconductortransconductancetransit frequencyvertical OFET

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Area of Science:

  • Organic electronics
  • Semiconductor device physics
  • Materials science

Background:

  • Organic field-effect transistors (OFETs) are promising for flexible electronics due to low-temperature processing.
  • Vertical OFETs (VOFETs) enable submicrometer channel lengths for enhanced performance but suffer from short-channel effects like leakage.

Purpose of the Study:

  • To investigate the impact of the source electrode injection barrier on VOFET performance metrics.
  • To analyze the trade-offs between off-currents, on/off ratio, and transconductance in VOFETs.

Main Methods:

  • Fabrication of VOFETs using 2,6-diphenyl anthracene (DPA) and C60 as semiconducting materials.
  • Systematic variation of the source electrode injection barrier height.
  • Characterization of electrical performance, including off-currents and transconductance.
  • Utilized 2D drift-diffusion simulations to model device behavior.

Main Results:

  • Increasing the Schottky barrier at the source electrode significantly reduced source-drain leakage by up to three orders of magnitude.
  • A higher injection barrier led to increased contact resistance, detrimentally affecting transconductance and transit frequency.
  • Simulations confirmed an inherent trade-off between achieving low off-currents and high transconductance in current VOFET designs.

Conclusions:

  • The source injection barrier critically influences VOFET switching properties and performance.
  • Current VOFET architectures face fundamental limitations in simultaneously optimizing low leakage and high speed.
  • Novel device designs are necessary to overcome inherent trade-offs and achieve VOFETs with both excellent switching and high performance.