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Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
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Superconductivity in In2Te3 under Compression Induced by Electronic and Structural Phase Transitions
Jiapeng Zhen1, Wen Deng1, Cong Li1
1Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China.
The Journal of Physical Chemistry Letters
|January 28, 2022
Summary
Indium telluride (In2Te3) exhibits pressure-induced electronic transitions from semiconductor to metal, leading to superconductivity. This study reveals how pressure influences its structure and electronic properties, offering insights for future superconducting material research.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid State Chemistry
Background:
- Indium telluride (In2Te3) is a layered III-IV semiconductor material.
- Layered materials are known for their sensitivity to external stimuli like pressure and strain.
Purpose of the Study:
- To investigate the electronic properties and structural evolution of In2Te3 under high pressure.
- To understand the mechanism of pressure-induced metallization and superconductivity in In2Te3.
Main Methods:
- High-pressure electric transport measurements
- Raman spectroscopy
- X-ray diffraction (XRD)
- First-principles calculations
Main Results:
- Observed evidence of isostructure electronic transitions in In2Te3 under pressure.
- First-principle calculations confirmed a semiconductor-to-metal transition due to increased density of states near the Fermi level.
- Pressure-induced metallization preceded structural phase transition and induced superconductivity.
- Superconductivity critical temperature (Tc) increased slightly upon decompression, then decreased due to disorder.
Conclusions:
- The study elucidates the pressure-induced superconducting phase of the In-Te system.
- Findings provide a reference for developing and applying superconducting materials under pressure.
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