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Updated: Oct 5, 2025
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Achieving a Record-High Capacitive Energy Density on Si with Columnar Nanograined Ferroelectric Films
Hanfei Zhu1, Yu-Yao Zhao2, Jun Ouyang1
1Institute of Advanced Energy Materials and Chemistry, Jinan Engineering Laboratory for Multi-scale Functional Materials, Shandong Provincial Key Laboratory of Molecular Engineering, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China.
Abstract:
High energy density dielectric film capacitors are desirable in modern electronic devices. Their miniaturization and integration into Si-based microsystems create opportunities for in-circuit energy supply, buffering, and conditioning. Here, we present a CMOS (complementary metal oxide semiconductor)-compatible route for the fabrication of BaTiO3 film capacitors on Si with a record-high recoverable energy density and good efficiency (∼242 J/cm3 and ∼76% at 8.75 MV/cm). These BaTiO3 films were sputter-deposited at 350 °C and consisted of slightly compressed superfine columnar nanograins with a (001) texture. Such a nanostructure was endowed with a high breakdown strength, a reduced remnant polarization, and an enhanced maximum polarization, which are accountable for their excellent energy storage performance. Moreover, these BaTiO3 film capacitors displayed a high electrical fatigue resistance, a wide range of operating temperatures, and an excellent frequency stability. With an engineered nanostructure, the prototype perovskite of BaTiO3 has shown great promise for capacitive energy storage applications.
