Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

359
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
359
Biasing of FET01:22

Biasing of FET

385
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
385
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

992
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
992
Biasing of P-N Junction01:16

Biasing of P-N Junction

1.0K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.0K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

555
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
555
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

512
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
512

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

The Role of Polymer Encapsulation in Optimizing Donor-Acceptor Organic Nanoparticles for Efficient Cancer Phototherapy.

International journal of molecular sciences·2026
Same author

Donor-Acceptor Derivatives of Indolo[3,2-b]indole and Benzothieno[3,2-b]benzothiophene: Similar Annulated Structures but Divergent Properties.

Molecules (Basel, Switzerland)·2026
Same author

Effect of Electron-Withdrawing Substituents on Raman Spectra of Diaryl-BTBT Derivatives.

International journal of molecular sciences·2026
Same author

Integrated control of a nanoindenter and X-ray nanodiffraction for automated in situ nanomechanical studies.

Journal of synchrotron radiation·2026
Same author

Spatiotemporally localized optical links and knots.

Nature communications·2026
Same author

Wigner picture of partially coherent accelerating beams.

Optics letters·2026

Related Experiment Video

Updated: Oct 4, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.9K

In Situ Coupling Applied Voltage and Synchrotron Radiation: Operando Characterization of Transistors.

Anton Davydok1, Yuriy N Luponosov2, Sergey A Ponomarenko2

  • 1Institute for Materials Physics, Helmholtz-Zentrum Hereon, Notkestr 85, 22607, Hamburg, Germany.

Nanoscale Research Letters
|February 2, 2022
PubMed
Summary

A new setup enables in situ electrical testing of organic field-effect transistors (OFETs) alongside X-ray scattering. This allows direct correlation of material structure changes with applied voltage, advancing OFET research.

Keywords:
OFETsOperando studiesnanoGIWAXSnanoGIXDα,ω-dihexyl-α-quaterthiophene

More Related Videos

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K
Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

13.2K

Related Experiment Videos

Last Updated: Oct 4, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.9K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K
Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

13.2K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Electrical Engineering

Background:

  • In situ electrical testing of organic field-effect transistors (OFETs) is crucial for understanding device performance.
  • Existing experimental setups can be complex, limiting the study of newly developed OFETs under real operating conditions.
  • Synchrotron-based X-ray scattering offers detailed structural insights but requires specialized integration with electrical testing.

Purpose of the Study:

  • To develop a compact and versatile voltage application setup for in situ electrical testing of OFETs.
  • To enable simultaneous X-ray scattering studies during electrical operation at synchrotron beamlines.
  • To correlate structural changes in OFET materials with applied voltage in real-time.

Main Methods:

  • Development of a compact voltage application setup for OFETs.
  • Integration of the setup with X-ray scattering techniques at a synchrotron beamline.
  • In situ electrical characterization and grazing X-ray scattering measurements on oligothiophene-based OFETs.
  • Monitoring structural changes before, during, and after voltage application.

Main Results:

  • The developed setup successfully enabled in situ electrical testing of OFETs combined with X-ray scattering.
  • Direct correlations between applied voltage and material structural changes were observed.
  • The setup demonstrated versatility by eliminating shadowing and short-circuit issues.
  • Oligothiophene-based OFETs exhibited high electrical stability and directional anisotropy under applied voltage.

Conclusions:

  • The compact and flexible setup facilitates in situ electrical and structural studies of small-dimension devices.
  • This integrated approach provides valuable insights into the operational mechanisms and stability of organic electronic materials.
  • The developed system enhances the capability for comprehensive characterization of novel OFETs at synchrotron facilities.