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Published on: December 14, 2017
First-principles study of fission products Xe and Cs behaviors in U3Si2
Jutao Hu1, Menglu Li1, Hengfeng Gong2,3
1School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China.
Abstract:
In the past several decades, the U3Si2has received much attention for the development of accident tolerant fuel in light water reactors because of its superior thermal conductivity and higher uranium density. In this study, density functional theory calculations have been carried out to study the occupation and diffusion behaviors of fission products Xe and Cs in U3Si2. It is revealed that the occupation sites of Xe and Cs depend on the chemical environment, and both of Xe and Cs are favorable to substitute for U or Si sites. The diffusions of Xe and Cs in U3Si2are predicted to be via the vacancy mechanism and both of Xe and Cs form cluster easily. As compared with Cs, the Xe exhibits a smaller solubility, faster diffusion as well as stronger clustering tendency, which may cause larger bubble size for Xe than Cs under the same conditions in U3Si2. The differences in the diffusion behaviors between Xe and Cs mainly result from their different valence electronic configurations and different atomic radii.
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