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Terahertz-assisted even harmonics generation in silicon.

Yingying Ding1,2, Yushan Zeng1, Xieqiu Yu1,2

  • 1State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P.R. China.

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Scientists achieved ultrafast, nondestructive symmetry control in silicon using intense terahertz fields. They observed higher-order harmonic generation, enabling new possibilities for advanced electronics and photonics.

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Area of Science:

  • Solid-state physics
  • Nonlinear optics
  • Materials science

Background:

  • Centrosymmetric crystals generate even-order harmonics when subjected to biased electric/light fields, revealing material properties.
  • Terahertz (THz)-induced symmetry breaking has enabled second harmonic generation, but higher-order harmonics remain unexplored.

Purpose of the Study:

  • To demonstrate ultrafast, nondestructive symmetry manipulation in silicon using intense THz fields.
  • To explore the generation and characterization of higher-order harmonic radiation in THz-field-induced symmetry breaking.

Main Methods:

  • Applying an intense 500 kV/cm terahertz (THz) electric field to silicon crystals.
  • Utilizing an infrared probe to observe and characterize the generated harmonic radiation.
  • Investigating the dependence of even-order harmonics on THz field direction.

Main Results:

  • Achieved picosecond-level ultrafast, nondestructive symmetry manipulation of silicon.
  • Observed and characterized the THz-induced fourth harmonic of the infrared probe for the first time.
  • Found that even-order harmonics are independent of the THz field direction, allowing sub-cycle symmetry control.

Conclusions:

  • Demonstrated a novel method for ultrafast crystal symmetry control in silicon.
  • Opened new avenues for exploring higher-order harmonic generation in centrosymmetric materials.
  • Paved the way for future applications in ultrafast all-optical crystal symmetry control for high-speed electronics and photonics.