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Hole Transport Layer Free Perovskite Light-Emitting Diodes With High-Brightness and Air-Stability Based on
Fang Yuan1, Min Zhang1, Chunrong Zhu1
1Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, China.
Abstract:
Recently, perovskite light-emitting diodes (PeLEDs) have drew widespread attention due to their high efficiencies. However, because of the sensitivity to moisture and oxygen, perovskite luminescent layers are usually prepared in high-purity nitrogen environment, which increases the cost and process complexity of device preparation and seriously hindrances its commercialization of PeLED in lighting and display application. Herein, dual-phase all-inorganic composite CsPbBr3-Cs4PbBr6 films are fabricated from CsBr-rich perovskite solutions by a simple one-step spin-coating method in the air with high humidity. Compared with the pure CsPbBr3 film, the composite CsPbBr3-Cs4PbBr6 film has much stronger photoluminescence emission and longer fluorescence lifetime, accompanied by increased photoluminescence quantum yield (33%). As a result, we obtained green PeLED devices without hole transport layer exhibiting a maximum brightness of 72,082 cd/m2 and a maximum external quantum efficiency of about 2.45%, respectively. More importantly, the champion device shows excellent stability with operational half-lifetime exceeding 1,000 min under continuous operation in the air. The dual-phase all-inorganic composite CsPbBr3-Cs4PbBr6 film shows attractive prospect for advanced light emission applications.
