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White-Light-Driven Resonant Emission from a Monolayer Semiconductor.

Jingzhi Shang1, Lishu Wu2, Shun Feng2

  • 1Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), Xi'an, 710129, China.

Advanced Materials (Deerfield Beach, Fla.)
|February 7, 2022
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Summary

Researchers demonstrate net resonant emission from monolayer semiconductors using white-light or solar illumination. This breakthrough enables white-light-powered photonic devices for optical interconnects and quantum computing.

Keywords:
2D semiconductorsresonant emissionwhite-light pumping

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Area of Science:

  • Photonics and Materials Science
  • Optoelectronics
  • Semiconductor Devices

Background:

  • Resonant emission in photonic structures is crucial for all-photonic circuits, optical interconnects, and quantum computing.
  • Current methods primarily use coherent light for optical generation, limiting the use of readily available incoherent sources like white light or solar power.
  • Developing on-chip light sources powered by white-light or solar energy is a significant challenge but highly desirable.

Purpose of the Study:

  • To demonstrate net resonant emission from a monolayer semiconductor using simulated solar illumination (white-light-emitting diode).
  • To show the compatibility of this approach with existing silicon-based photonic technology.
  • To investigate the characteristics of resonant emission under both coherent and white-light excitation.

Main Methods:

  • Fabrication of a planar microcavity device by embedding a 2D semiconductor gain medium onto a silicon wafer.
  • Optical pumping using both coherent and white-light excitation sources.
  • Characterization of the emitted light, including wavelength, linewidth, polarization, location, and beam profile.

Main Results:

  • Achieved net resonant emission from a monolayer semiconductor under simulated solar (white-light) illumination.
  • Demonstrated consistent resonant characteristics (wavelength, linewidth, polarization, location, Gaussian beam) for both coherent and white-light excitation.
  • Observed doublet emission in the fundamental TEM00 mode due to anisotropy-induced non-degenerate states with orthogonal polarizations.
  • Attributed extraordinary spectral flipping to the interplay between resonant absorption and emission.

Conclusions:

  • Successfully demonstrated white-light-excited resonant emission from a 2D semiconductor in a planar microcavity.
  • The developed device is compatible with silicon photonics, paving the way for white-light or solar-powered on-chip photonic applications.
  • This work offers a pathway towards energy-efficient and accessible photonic technologies.