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Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon
Mao Wang1, Ye Yu2, Slawomir Prucnal1
1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany. m.wang@hzdr.de.
Nanoscale
|February 8, 2022
Summary
Tellurium-hyperdoped silicon enables mid-infrared plasmonic sensing. Fabricating antennas on this material extends sensing to the far-infrared, paving the way for integrated, high-performance plasmonic sensors on a CMOS platform.
Area of Science:
- Materials Science
- Nanotechnology
- Spectroscopy
Background:
- Plasmonic sensing in the infrared region offers enhanced molecular detection via vibrational fingerprints.
- Noble metals, commonly used for plasmonic resonances, present challenges including high radiative losses and fabrication difficulties for mid- to far-infrared applications.
- Compatibility with complementary metal-oxide-semiconductor (CMOS) manufacturing remains a hurdle for noble metal-based plasmonic sensors.
Purpose of the Study:
- To demonstrate mid-infrared localized surface plasmon resonances (LSPR) in tellurium-hyperdoped silicon.
- To enhance and extend these LSPR into the far-infrared range using micro-antenna arrays.
- To explore the integration potential of tellurium-hyperdoped silicon plasmonic sensors with CMOS technology.
Main Methods:
- Hyperdoping thin silicon films with tellurium to induce plasmonic properties.
- Fabricating two-dimensional arrays of micrometer-sized antennas on tellurium-hyperdoped silicon chips.
- Characterizing the mid- and far-infrared optical responses of the fabricated structures.
Main Results:
- Observation of mid-infrared localized surface plasmon resonances (LSPR) in tellurium-hyperdoped silicon.
- Enhancement and spectral extension of LSPR into the far-infrared range by antenna fabrication.
- Demonstration of tellurium-hyperdoped silicon's potential as an infrared photodetector.
Conclusions:
- Tellurium-hyperdoped silicon is a viable material for mid- to far-infrared plasmonic sensing.
- The developed antenna structures significantly enhance plasmonic properties.
- This work facilitates the integration of plasmonic sensors with CMOS platforms for mass manufacturing.
