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Quasi-quantized Hall response in bulk InAs.

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The quasi-quantized Hall effect (QQHE) was observed in bulk semiconductor InAs, demonstrating it

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Area of Science:

  • Condensed Matter Physics
  • Materials Science

Background:

  • The quasi-quantized Hall effect (QQHE) is the three-dimensional (3D) analog of the integer quantum Hall effect (QHE).
  • QQHE has been observed in layered materials with 3D anisotropic Fermi surfaces.
  • Theoretical predictions suggest QQHE may occur in a broader range of bulk materials.

Purpose of the Study:

  • To investigate the occurrence of 3D QQHE in bulk semiconductor InAs.
  • To compare experimental observations with theoretical predictions for 3D QQHE in materials with parabolic electron bands.

Main Methods:

  • Experimental measurement of Hall conductivity and longitudinal resistivity in n-type InAs.
  • Analysis of the onset of plateau-like features in Hall conductivity.
  • Comparison of experimental results with theoretical calculations.

Main Results:

  • Quasi-quantized plateau-like features were observed in the Hall conductivity of InAs.
  • The onset of these features scaled with a specific formula related to the conductance quantum.
  • A Shubnikov-de Haas minimum in longitudinal resistivity accompanied the Hall conductivity features.

Conclusions:

  • Experimental results in InAs are consistent with predictions for 3D QQHE.
  • The 3D QQHE appears to be a generic effect observable in materials with small Fermi surfaces under strong magnetic fields.