Stability, optoelectronic and thermal properties of two-dimensional Janusα-Te₂S

Motivated by recent progress in the two-dimensional (2D) materials of group VI elements and their experimental fabrication, we have investigated the stability, optoelectronic and thermal properties of Janusα-Te₂S monolayer using first-principles calculations. The phonon dispersion and MD simulations confirm its dynamical and thermal stability. The moderate band gap (∼1.5 eV), ultrahigh carrier mobility (∼10³cm²V^-1s^-1), small exciton binding energy (0.26 eV), broad optical absorption range and charge carrier separation ability due to potential difference (ΔV = 1.07 eV) on two surfaces of Janusα-Te₂S monolayer makes it a promising candidate for solar energy conversion. We propose various type-II heterostructures consisting of Janusα-Te₂S and other transition metal dichalcogenides for solar cell applications. The calculated power conversion efficiencies of the proposed heterostructures, i.e.α-Te₂S/T-PdS₂,α-Te₂S/BP andα-Te₂S/H-MoS₂are ∼21%, ∼19% and 18%, respectively. Also, the ultralow value of lattice thermal conductivity (1.16 W m^-1K^-1) of Janusα-Te₂S makes it a promising material for the fabrication of next-generation thermal energy conversion devices.