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Impurity Controlled near Infrared Surface Plasmonic in AlN
Quanjiang Li1, Jingang Wang2, Shenghui Chen1
1School of Physics and Optoelectronics Engineering, Ludong University, Yantai 264025, China.
Nanomaterials (Basel, Switzerland)
|February 15, 2022
Summary
This study explored optical properties of doped aluminium nitride (AlN) using computational simulations. Doped AlN exhibited strong surface plasmon resonance (SPR) in the near-infrared, enhancing optical spectroscopy applications.
Area of Science:
- Materials Science
- Computational Physics
- Quantum Optics
Background:
- Aluminium nitride (AlN) is a wide-bandgap semiconductor with potential optical applications.
- Understanding optical properties of doped AlN is crucial for advanced spectroscopy.
- Computational simulations offer a powerful tool for materials property prediction.
Purpose of the Study:
- To investigate the optical properties of substitutional doped aluminium nitride (AlN).
- To explore the phenomenon of surface plasmon resonance (SPR) in doped AlN.
- To assess the potential of doped AlN in optical spectroscopy.
Main Methods:
- Multi-scale computational simulations.
- Density functional theory (DFT) calculations.
- Finite element analysis (FEA).
Main Results:
- Strong surface plasmon resonance (SPR) observed in the near-infrared region for alkali metal doped AlN.
- Electric field strengths reached up to 10^9 V/m.
- Exciton behaviors, including local and charge transfer excitons, were identified in specific doping configurations.
Conclusions:
- The study demonstrates the utility of multi-scale simulations for analyzing quantum surface plasmons.
- Doped AlN shows promise for applications in surface-enhanced linear and non-linear optical spectroscopy.
- Computational findings pave the way for novel AlN-based optical devices.
