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Problems with Evaluation of Micro-Pore Size in Silicon Carbide Using Synchrotron X-ray Phase Contrast Imaging
Tatiana S Argunova1, Victor G Kohn2
1Ioffe Institute of the Russian Academy of Sciences, Polytekhnicheskaya st. 26, 194021 St. Petersburg, Russia.
Materials (Basel, Switzerland)
|February 15, 2022
Summary
Computer simulations reveal how synchrotron X-ray phase-contrast imaging can non-destructively detect micropores in silicon carbide (SiC) crystals. This technique aids in analyzing pore sizes for material quality assessment.
Area of Science:
- Materials Science
- Crystallography
- Non-destructive Testing
Background:
- Micropores in silicon carbide (SiC) crystals, even sparsely distributed, significantly impact material properties.
- Non-destructive techniques are crucial for characterizing these defects in SiC.
Purpose of the Study:
- To perform computer simulations of synchrotron X-ray phase-contrast imaging for micropore detection in SiC.
- To quantitatively evaluate micropore sizes using simulated phase-contrast images.
- To analyze the effectiveness of near-field and far-field imaging for pore characterization.
Main Methods:
- Near- and far-field computer simulations of X-ray phase-contrast imaging.
- Modeling a micropore within a silicon carbide crystal as a test system.
- Comparison of simulated images with experimental results.
Main Results:
- Synchrotron X-ray in-line phase-contrast imaging effectively reveals μm-sized pores in SiC crystals.
- Near-field phase-contrast images provide information at very short sample distances.
- Far-field imaging requires specific contrast analysis within Fresnel zones for pore size estimation.
Conclusions:
- Computer simulations of X-ray phase-contrast imaging offer a quantitative method for assessing micropore sizes in SiC.
- The study highlights the utility of synchrotron radiation for non-destructive material characterization.
- Challenges in micro-pore size evaluation via image analysis are discussed.
