Nanoscale Thermal Cloaking in Silicon Film: A Molecular Dynamic Study

Nanoscale thermal shielding is becoming increasingly important with the miniaturization of microelectronic devices. They have important uses in the field of thermal design to isolate electronic components. Several nanoscale thermal cloaks based on graphene and crystalline silicon films have been designed and experimentally verified. No study has been found that simultaneously treats the functional region of thermal cloak by amorphization and perforation methods. Therefore, in this paper, we construct a thermal cloak by the above methods, and the ratio of thermal cloaking and response temperature is used to explore its cloaking performance under constant and dynamic temperature boundary. We find that compared with the dynamic boundary, the cloaking effect produced under the constant boundary is more obvious. Under two temperature boundaries, the thermal cloak composed of amorphous and perforated has a better performance and has the least disturbance to the background temperature field. The phonon localization effect produced by the amorphous structure is more obvious than that of the perforated structure. The phonon localization of the functional region is the main reason for the cloaking phenomenon, and the stronger the phonon localization, the lower the thermal conductivity and the more obvious the cloaking effect. Our study extends the nanoscale thermal cloak construction method and facilitates the development of other nanoscale thermal functional devices.