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Performance of High Efficiency Avalanche Poly-SiGe Devices for Photo-Sensing Applications.

Yuang-Tung Cheng1, Tsung-Lin Lu1, Shang-Husuan Wang1

  • 1Department of Electrical Engineering, National Taiwan Ocean University, No.2, Pei-Ning Rd., Keelung 202, Taiwan.

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Optimally annealed poly-silicon-germanium (poly-SiGe) thin films significantly enhance avalanche photo-sensor (APS) performance. Annealing at 800 °C for 30 minutes boosts responsivity and quantum efficiency by up to 96% for optical applications.

Keywords:
avalanche multiplication factorlow pressure chemical vapor deposition (LPCVD) systempoly-silicon germanium (poly-SiGe)quantum efficiencyresponsivity

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Area of Science:

  • Materials Science
  • Semiconductor Devices
  • Optoelectronics

Background:

  • Poly-silicon-germanium (poly-SiGe) is a key material for advanced semiconductor devices.
  • Avalanche photo-sensors (APSs) are crucial for light detection and optical communication.
  • Heterojunction structures offer potential for improved device performance.

Purpose of the Study:

  • To investigate the effect of annealing on epitaxial poly-SiGe thin films for APS fabrication.
  • To optimize the annealing process for enhanced poly-SiGe APS performance.
  • To evaluate the performance improvements in responsivity and quantum efficiency.

Main Methods:

  • Epitaxial poly-SiGe thin films were deposited using low-pressure chemical vapor deposition (LPCVD).
  • Thin films were subjected to post-deposition annealing at various temperatures and durations, with optimal conditions identified at 800 °C for 30 minutes in a hydrogen atmosphere.
  • Fabricated APS devices with optimized poly-SiGe films were tested under specific light conditions (3 μW/cm², 550 nm) and biased voltages (up to 27 V).

Main Results:

  • Optimal annealing conditions (800 °C, 30 min, H₂ atmosphere) significantly improved poly-SiGe film quality.
  • APS devices utilizing optimally annealed poly-SiGe films demonstrated substantial performance gains: nearly 70% improvement in responsivity and 85% in quantum efficiency compared to non-annealed devices.
  • The avalanche multiplication factor showed improved uniformity with increasing APS-junction voltage under optimal conditions (n=3).

Conclusions:

  • Optimized annealing of poly-SiGe thin films is critical for high-performance APS development.
  • The enhanced APS devices show significant potential for applications in photo-sensing and optical communications.
  • Further research into uniformity and junction voltage characteristics can lead to even more advanced optoelectronic devices.