Molecular dynamic simulation on temperature evolution of SiC under directional microwave radiation

Silicon carbide (SiC) is widely used as the substrate for high power electronic devices as well as susceptors for microwave (MW) heating. The dynamics of microwave interaction with SiC is not fully understood, especially at the material boundaries. In this paper, we used the molecular dynamics simulation method to study the temperature evolution during the microwave absorption of SiC under various amplitudes and frequencies of the microwave electric field. Directional MW heating of a SiC crystal slab bounded by surfaces along [100] crystallographic direction shows significantly faster melting when the field is applied parallel to the surface compared to when applied perpendicular.