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Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
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Barium titanate-enhanced hexagonal boron nitride inks for printable high-performance dielectrics
Hyunho Kim1, Adrees Arbab1,2, Benji Fenech-Salerno1
1Molecular Sciences Research Hub, Department of Chemistry, Imperial College London, White City Campus, 82 Wood Lane, London W12 0BZ, United Kingdom.
Nanotechnology
|February 15, 2022
Summary
Researchers developed printable dielectric inks using hexagonal boron nitride (h-BN) and barium titanate (BaTiO3) nanoparticles. These inks enable high-performance flexible capacitors for low-power printed electronics applications.
Area of Science:
- Materials Science
- Nanotechnology
- Electronics Engineering
Background:
- Printed electronics offer potential for flexible and wearable devices.
- Solution-processed dielectric inks are crucial for low-power, high-performance printed electronics.
- Two-dimensional materials like hexagonal boron nitride (h-BN) are promising printable dielectrics.
Purpose of the Study:
- To investigate barium titanate (BaTiO3) nanoparticles as an additive for inkjet-printable h-BN dielectric inks.
- To enhance the dielectric properties of h-BN based inks for printed electronics.
Main Methods:
- Formulation of water-based inks combining exfoliated h-BN flakes and BaTiO3 nanoparticles.
- Inkjet printing of BaTiO3/h-BN thin films.
- Characterization of dielectric properties and fabrication of flexible capacitors.
Main Results:
- Inkjet-printed BaTiO3/h-BN thin films achieved a dielectric constant (εr) of ~16 with 10% BaTiO3 nanoparticle addition.
- The developed inks enabled the fabrication of all-inkjet printed flexible capacitors with a capacitance (C) of ~10.39 nF cm-2.
Conclusions:
- Barium titanate nanoparticles effectively enhance the dielectric performance of h-BN based inks.
- This advancement paves the way for low-power, printed, and flexible electronic applications.
- The study demonstrates a viable route for creating advanced dielectric materials for next-generation electronics.

