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Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb2Br5 perovskite.
Tufan Paul1, Pranab Kumar Sarkar2, Soumen Maiti3
1School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700032, India. kalyan_chattopadhyay@yahoo.com.
Dalton Transactions (Cambridge, England : 2003)
|February 16, 2022
Summary
Flexible halide perovskite memory devices demonstrate stable resistive switching (RS) with high endurance and retention. These low-voltage devices show potential for next-generation electronics, even under bending and light conditions.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanoscience and Nanotechnology
Background:
- The demand for low-power, durable electronic memory devices persists despite technological advancements.
- Halide perovskites (HPs) offer unique photoelectrical properties, including ionic-motion-based switching, making them promising for memory applications.
- Existing memory technologies face challenges in power consumption, durability, and performance reliability.
Purpose of the Study:
- To develop and characterize a flexible memory device utilizing a CsPb2Br5 switching layer.
- To investigate the resistive switching (RS) behavior, reliability, and mechanical stability of the flexible HP-based memory device.
- To explore the influence of external stimuli, such as bending and light, on device performance.
Main Methods:
- Fabrication of flexible memory devices with an Al/CsPb2Br5/ITO-PET structure.
- Characterization of bipolar resistive switching (RS) properties, including operating voltage, endurance, retention time, and on/off ratio.
- Evaluation of device performance under various bending conditions and blue light illumination.
Main Results:
- The flexible device exhibited pronounced bipolar RS characteristics at low operating voltage without a forming process.
- Achieved high endurance (>100 cycles), long retention time (103 s), a high on/off ratio (~102), and multilevel data storage capability.
- Demonstrated excellent mechanical stability, with performance unaffected by bending up to 500 cycles, and modulation of RS by blue light.
Conclusions:
- The all-inorganic halide perovskite CsPb2Br5 is a viable material for stable, nonvolatile, flexible memory devices.
- The observed RS behavior is attributed to the formation and annihilation of conductive multifilaments driven by ion migration.
- These findings validate the potential of HPs for next-generation flexible electronic systems requiring robust and low-power memory solutions.
