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Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb2Br5 perovskite.

Tufan Paul1, Pranab Kumar Sarkar2, Soumen Maiti3

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Summary

Flexible halide perovskite memory devices demonstrate stable resistive switching (RS) with high endurance and retention. These low-voltage devices show potential for next-generation electronics, even under bending and light conditions.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanoscience and Nanotechnology

Background:

  • The demand for low-power, durable electronic memory devices persists despite technological advancements.
  • Halide perovskites (HPs) offer unique photoelectrical properties, including ionic-motion-based switching, making them promising for memory applications.
  • Existing memory technologies face challenges in power consumption, durability, and performance reliability.

Purpose of the Study:

  • To develop and characterize a flexible memory device utilizing a CsPb2Br5 switching layer.
  • To investigate the resistive switching (RS) behavior, reliability, and mechanical stability of the flexible HP-based memory device.
  • To explore the influence of external stimuli, such as bending and light, on device performance.

Main Methods:

  • Fabrication of flexible memory devices with an Al/CsPb2Br5/ITO-PET structure.
  • Characterization of bipolar resistive switching (RS) properties, including operating voltage, endurance, retention time, and on/off ratio.
  • Evaluation of device performance under various bending conditions and blue light illumination.

Main Results:

  • The flexible device exhibited pronounced bipolar RS characteristics at low operating voltage without a forming process.
  • Achieved high endurance (>100 cycles), long retention time (103 s), a high on/off ratio (~102), and multilevel data storage capability.
  • Demonstrated excellent mechanical stability, with performance unaffected by bending up to 500 cycles, and modulation of RS by blue light.

Conclusions:

  • The all-inorganic halide perovskite CsPb2Br5 is a viable material for stable, nonvolatile, flexible memory devices.
  • The observed RS behavior is attributed to the formation and annihilation of conductive multifilaments driven by ion migration.
  • These findings validate the potential of HPs for next-generation flexible electronic systems requiring robust and low-power memory solutions.