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Aggregation-Dependent Dielectric Permittivity in 2D Molecular Crystals.

Yutian Yang1, Yingying Wang2, Jingsi Qiao3

  • 1School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189, P. R. China.

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|February 17, 2022
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Summary

The dielectric permittivity of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) molecular crystals changes with layer stacking. Molecular orientation on WS2 substrates dictates permittivity, enabling device tuning.

Keywords:
2Daggregationanisotropydielectric permittivityorganic molecular crystals

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Organic Electronics

Background:

  • The performance of 2D molecular crystal devices relies on intrinsic properties like energy levels and dielectric permittivity.
  • Molecular aggregation significantly influences these properties, impacting device functionality.

Purpose of the Study:

  • To investigate and demonstrate the tunability of dielectric permittivity in C8-BTBT molecular crystals grown on WS2 substrates.
  • To understand the relationship between molecular orientation, aggregation, and dielectric properties.

Main Methods:

  • Growth of C8-BTBT molecular crystals on monolayer WS2 substrates.
  • Polarized optical contrast spectroscopy to measure dielectric permittivity.
  • Analysis of molecular orientations (lying-down vs. standing-up) and Coulomb coupling (J_Coup).

Main Results:

  • Dielectric permittivity of C8-BTBT was tuned from 4.62 (wetting layer) to 2.25 (second layer).
  • Observed permittivity anisotropy related to molecular orientation and substrate interaction.
  • Identified H-aggregation (positive J_Coup) in the wetting layer and J-aggregation (negative J_Coup) in subsequent layers.

Conclusions:

  • Molecular orientation is the key factor controlling dielectric permittivity in C8-BTBT on WS2.
  • The findings provide a pathway for manipulating dielectric properties of 2D molecular crystals.
  • This research can advance the development of novel electronic and optoelectronic devices.