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Waveguide coupled III-V photodiodes monolithically integrated on Si.

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Nanotechnology

Background:

  • Integrating III-V nanostructures on silicon is crucial for advanced optical interconnects.
  • Monolithic integration enables miniaturization and enhanced performance of optoelectronic devices.

Purpose of the Study:

  • To demonstrate monolithically integrated, waveguide-coupled III-V photodiodes on silicon.
  • To evaluate the photodiodes' performance in terms of dark current, responsivity, and high-speed detection.
  • To assess the devices' light-emitting capabilities and thermal behavior.

Main Methods:

  • Fabrication of InP/In0.5Ga0.5As/InP p-i-n heterostructures on silicon substrates.
  • Characterization of waveguide-coupled photodiodes, including dark current and responsivity measurements.
  • High-speed testing using grating couplers for data reception at 50 GBd (Gigabaud).
  • Investigation of self-heating effects using scanning thermal microscopy.

Main Results:

  • Achieved low dark current (0.048 A/cm² at -1 V) and high responsivity (0.2 A/W at -2 V).
  • Demonstrated high-speed photodetection with a cutoff frequency exceeding 70 GHz.
  • Successfully received data at 50 GBd using On-Off Keying (OOK) and 4-level Pulse Amplitude Modulation (4PAM).
  • Observed light emission at 1550 nm when operated as a light-emitting diode, with minimal self-heating (~15 K).

Conclusions:

  • Monolithic integration of III-V photodiodes on silicon is feasible and enables high-performance optoelectronic devices.
  • The demonstrated devices are suitable for high-speed optical communication applications.
  • The dual functionality as photodetectors and light emitters opens possibilities for integrated photonic circuits.