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Types of Semiconductors01:20

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Photoluminescence offers a wide range of applications due to its inherent sensitivity and selectivity. This technique allows for both direct and indirect analyses of the analyte. Direct quantitative analysis is possible when the analyte exhibits a favorable quantum yield for fluorescence or phosphorescence. However, an indirect analysis may be feasible if the analyte is not fluorescent or phosphorescent, or if the quantum yield is unfavorable. Indirect methods include reacting the analyte with...
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Two-Dimensional Violet Phosphorus: A p-Type Semiconductor for (Opto)electronics.

Antonio Gaetano Ricciardulli1, Ye Wang1, Sheng Yang2

  • 1University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, 67000 Strasbourg, France.

Journal of the American Chemical Society
|February 18, 2022
PubMed
Summary
This summary is machine-generated.

Violet phosphorus (VP) is exfoliated into few-layer flakes, revealing promising p-type semiconductor properties. This discovery offers a new material for advanced optoelectronics and complementary metal oxide semiconductor (CMOS) devices.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) materials are crucial for next-generation electronics.
  • A lack of p-type 2D semiconductors limits device engineering, especially for CMOS applications.
  • New p-type 2D materials are essential for advancing beyond current Moore's Law limitations.

Purpose of the Study:

  • To exfoliate violet phosphorus (VP) into few-layer 2D materials.
  • To investigate the optoelectronic properties of exfoliated VP.
  • To assess VP's potential for next-generation electronic devices.

Main Methods:

  • Sonication-assisted liquid-phase exfoliation of violet phosphorus crystals.
  • Fabrication and characterization of field-effect transistors (FETs) using VP thin films.
  • Fabrication and characterization of photodetectors and CMOS inverter arrays with VP.

Main Results:

  • Exfoliated VP exhibits p-type transport with a high on/off ratio (10^4) and hole mobility (2.25 cm^2 V^-1 s^-1).
  • VP-based photodetectors show good photoresponsivity (10 mA W^-1) and fast response times (0.16 s).
  • VP integrated into CMOS inverters demonstrates a significant voltage gain (∼17).

Conclusions:

  • Violet phosphorus is a promising, versatile p-type 2D semiconductor.
  • Scalable production and excellent optoelectronic performance make VP suitable for advanced (opto)electronics.
  • VP offers a new avenue for more-than-Moore electronic and photonic device development.