Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of P-N Junction01:16

Biasing of P-N Junction

1.0K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.0K
P-N junction01:11

P-N junction

736
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
736

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Manipulating Interfacial Water Molecules via Eutectic-Polymer Dual-Network for Stable Electrochromic Devices.

Angewandte Chemie (International ed. in English)·2026
Same author

Wafer-scale growth of highly stable p-type semiconducting monolayer MoSi<sub>2</sub>N<sub>4</sub> single crystals.

Nature materials·2026
Same author

A Community-Based Health Literacy Intervention to Improve Health Literacy, Health Behavior Self-Efficacy, and Quality of Life Among Older Adults With Frailty: A Quasi-Experimental Study.

Journal of gerontological nursing·2026
Same author

Machine learning-based prediction of non-ionic iodinated contrast media-induced acute adverse reactions following contrast-enhanced CT.

International journal of medical informatics·2026
Same author

The MdPIF4-MdBCH1/MdLCYB2 module regulates drought resistance in apple via the xanthophyll cycle and ABA.

Plant physiology·2026
Same author

The safety window of blood magnesium in pulmonary complications of non-pulmonary sepsis: A U-shaped risk and prognostic analysis based on MIMIC-IV.

PloS one·2026

Related Experiment Video

Updated: Oct 2, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.8K

A Waveguide-Integrated Two-Dimensional Light-Emitting Diode Based on p-Type WSe2/n-Type CdS Nanoribbon

Xin Yang1, Rong Wu1, Biyuan Zheng1

  • 1Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China.

ACS Nano
|February 22, 2022
PubMed
Summary
This summary is machine-generated.

We developed a novel waveguide-integrated light-emitting diode using tungsten diselenide (WSe2) and cadmium sulfide (CdS) for efficient light routing in 2D optoelectronics.

Keywords:
cadmium sulfideelectroluminescencelight-emitting diodetungsten diselenidevan der Waals integrationwaveguide

More Related Videos

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
07:00

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Published on: June 25, 2020

7.3K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.8K

Related Experiment Videos

Last Updated: Oct 2, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.8K
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
07:00

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Published on: June 25, 2020

7.3K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.8K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Optoelectronics

Background:

  • Two-dimensional (2D) materials like transition metal dichalcogenides (TMDs) are promising for nanoscale light sources.
  • Current TMD light-emitting devices (LEDs) require external waveguides for effective light management.
  • Integrating TMDs with photonic nanostructures is key for compact and highly integrated 2D optoelectronic chips.

Purpose of the Study:

  • To create a room-temperature waveguide-integrated light-emitting device.
  • To demonstrate efficient optical routing and confinement using integrated nanostructures.
  • To explore the potential for 2D optoelectronic circuits with reduced footprint.

Main Methods:

  • Fabrication of a heterojunction diode using p-type monolayer tungsten diselenide (ML WSe2) and n-type cadmium sulfide (CdS) nanoribbon (NR).
  • Characterization of the device's electrical rectification and electroluminescence (EL) properties.
  • Analysis of EL intensity dependence on driving current to understand carrier injection mechanisms.

Main Results:

  • The hybrid LED showed clear rectification and pronounced electroluminescence at 1.65 eV from ML WSe2.
  • A superlinear EL intensity profile at high currents indicated facilitated carrier injection via intervalley scattering.
  • Efficient coupling and routing of WSe2 EL were achieved using CdS NR waveguides.

Conclusions:

  • Waveguide-integrated LEDs based on WSe2/CdS heterojunctions enable efficient light management.
  • This approach facilitates carrier injection and light routing for 2D optoelectronic applications.
  • These devices serve as dual-role modules for advanced TMD-based optoelectronic circuitries.