Design of a CMOS image sensor pixel with embedded polysilicon nano-grating for near-infrared imaging enhancement

Complementary metal-oxide semiconductor (CMOS) image sensor sensitivity in the near-infrared spectrum is limited by the absorption length in silicon. To deal with that limitation, we evaluate the implementation of a polysilicon nano-grating inside a pixel, at the transistor gate level of a 90 nm standard CMOS process, through opto-electrical simulations. The studied pixel structure involves a polysilicon nano-grating, designed with the fabrication layer of the transistor gate, which does not require any modifications in the process flow. The diffraction effect of the nano-grating increases the length of the light path in the photosensitive area and thus increases the photoelectric conversion efficiency. The nano-grating is integrated in combination with deep trench isolations to reduce cross talk between pixels. Coupled optical and electrical simulations report 33% external quantum efficiency improvement and 7% cross talk reduction at 850 nm.