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Updated: Oct 2, 2025

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition
Published on: December 21, 2015
Temperature-Dependent Growth and Evolution of Silicene on Au Ultrathin Films-LEEM and LEED Studies
1Institute of Physics, Faculty of Mathematics, Physics and Computer Science, Maria Curie-Sklodowska University, Pl. M. Curie-Sklodowskiej 1, 20-031 Lublin, Poland.
Abstract:
The formation and evolution of silicene on ultrathin Au films have been investigated with low energy electron microscopy and diffraction. Careful control of the annealing rate and temperature of Au films epitaxially grown on the Si(111) surface allows for the preparation of a large scale, of the order of cm2, silicene sheets. Depending on the final temperature, three stages of silicene evolution can be distinguished: (i) the growth of the low buckled phase, (ii) the formation of a layered heterostructure of the low buckled and planar phases of silicene and (iii) the gradual destruction of the silicene. Each stage is characterized by its unique surface morphology and characteristic diffraction patterns. The present study gives an overview of structures formed on the surface of ultrathin Au films and morphology changes between room temperature and the temperature at which the formation of Au droplets on the Si(111) surface occurs.

