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Related Concept Videos

Atomic Emission Spectroscopy: Instrumentation01:22

Atomic Emission Spectroscopy: Instrumentation

675
The instrumentation of atomic emission spectrometry (AES) involves various components, including atomization devices that convert samples into gas-phase atoms and ions. There are two main types of atomization devices: continuous and discrete atomizers.  Continuous atomizers, like plasmas and flames, introduce samples in a constant stream, while discrete atomizers inject individual samples using syringes or autosamplers. The most common discrete atomizer is the electrothermal atomizer.
675
Atomic Emission Spectroscopy: Lab01:29

Atomic Emission Spectroscopy: Lab

269
AES is a powerful analytical technique, especially effective when used with plasma sources, producing abundant spectra in characteristic emission lines. The Inductively Coupled Plasma (ICP), in particular, yields superior quantitative analytical data due to its high stability, low noise, low background, and minimal interferences under optimal experimental conditions. However, newer air-operated microwave sources are emerging as promising alternatives that could be more cost-effective than...
269
Inductively Coupled Plasma Atomic Emission Spectroscopy: Instrumentation01:26

Inductively Coupled Plasma Atomic Emission Spectroscopy: Instrumentation

335
Inductively coupled plasma (ICP) is the common plasma source used in atomic emission spectroscopy (AES), a technique that detects and analyzes various elements in a sample. This method is often called inductively coupled plasma atomic emission spectroscopy (ICP-AES).
There are three main types of inductively coupled plasma atomic emission spectroscopy  (ICP-AES) instruments: sequential, simultaneous multichannel, and Fourier transform instruments, with the latter being less commonly used....
335
Atomic Emission Spectroscopy: Interference01:30

Atomic Emission Spectroscopy: Interference

307
In atomic emission spectroscopy (AES), high-temperature atomizers excite a broad range of elements and molecules that generate complex emissions from sources such as oxides, hydroxides, and flame combustion products in the flame or plasma. Several strategies can be employed to minimize spectral interferences caused by overlapping emission lines or bands. These include increasing instrument resolution, choosing alternative emission lines, optimally placing the detector in low-background regions,...
307
Atomic Emission Spectroscopy: Overview01:20

Atomic Emission Spectroscopy: Overview

2.7K
Atomic emission spectroscopy (AES) is an analytical technique used to determine the elemental composition of a sample by analyzing the light emitted from excited atoms. In AES, atoms in a sample are excited to higher energy levels by thermal energy from high-temperature sources, such as plasma, arcs, or sparks. When these excited atoms return to lower energy states, they emit light at specific wavelengths characteristic of each element. The resulting atomic emission spectrum, which consists of...
2.7K
Inductively Coupled Plasma Atomic Emission Spectroscopy: Principle01:19

Inductively Coupled Plasma Atomic Emission Spectroscopy: Principle

953
Inductively coupled plasma (ICP) is the most widely used plasma source in atomic emission spectroscopy (AES), also known as Inductively Coupled Plasma Optical Emission Spectroscopy (ICP-OES). The ICP source, or torch, consists of three concentric quartz tubes with argon gas flowing through them. A spark from a Tesla coil initiates the ionization of argon, generating a high-temperature plasma.
The ions and electrons produced interact with the fluctuating magnetic field created by a water-cooled...
953

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Related Experiment Video

Updated: Oct 2, 2025

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
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An Endpoint Detection System for Ion Beam Etching Using Optical Emission Spectroscopy.

Junjie Zhang1,2, Jiahui Luo1,2, Xudong Zou1,2

  • 1State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100190, China.

Micromachines
|February 25, 2022
PubMed
Summary

A new ion beam etching system uses optical emission spectroscopy (OES) for precise etching endpoint detection (EPD). This advanced system accurately identifies material layers in complex films, ensuring high-quality results in semiconductor fabrication.

Keywords:
etching endpoint detectionion beam etchingoptical emission spectroscopy

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Emission Spectroscopic Boundary Layer Investigation during Ablative Material Testing in Plasmatron
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Area of Science:

  • Materials Science
  • Chemical Engineering
  • Analytical Chemistry

Background:

  • Ion beam etching is a critical process in microfabrication.
  • Accurate endpoint detection is essential for controlling etching depth and preventing over-etching.
  • Existing methods may lack precision or real-time feedback.

Purpose of the Study:

  • To develop and validate an ion beam etching system with enhanced endpoint detection capabilities.
  • To integrate optical emission spectroscopy (OES) for real-time monitoring of the etching process.
  • To demonstrate the system's effectiveness on various materials, including complex multilayer films.

Main Methods:

  • Conceived, built, and tested an ion beam etching system incorporating an expansion chamber for optical detector placement.
  • Utilized a flexible bracket system for adjustable optical detector positioning to capture emission spectra.
  • Employed optical fiber transmission to a computer for signal processing and data analysis.
  • Validated the system using simple elements (Al, Cr, Si, Mg) and complex multilayer film samples.

Main Results:

  • The system successfully detected characteristic emission lines from different material layers in complex films.
  • Determined optimal optical detector positioning for effective spectrum collection.
  • Demonstrated good real-time performance and excellent endpoint detection capabilities.
  • Established the system's detection limits through experiments with simple substances.

Conclusions:

  • The developed ion beam etching system with OES-based EPD provides accurate and real-time monitoring.
  • The system's design allows for flexible optical detection, enhancing its applicability.
  • It proves effective for precise etching control in multilayer film processing, crucial for advanced manufacturing.