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Updated: Oct 2, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Pauli Blockade of Tunable Two-Electron Spin and Valley States in Graphene Quantum Dots
Chuyao Tong1, Annika Kurzmann1, Rebekka Garreis1
1Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
Abstract:
Pauli blockade mechanisms-whereby carrier transport through quantum dots (QD) is blocked due to selection rules even when energetically allowed-are a direct manifestation of the Pauli exclusion principle, as well as a key mechanism for manipulating and reading out spin qubits. The Pauli spin blockade is well established for systems such as GaAs QDs, but is to be further explored for systems with additional degrees of freedom, such as the valley quantum numbers in carbon-based materials or silicon. Here we report experiments on coupled bilayer graphene double quantum dots, in which the spin and valley states are precisely controlled, enabling the observation of the two-electron combined blockade physics. We demonstrate that the doubly occupied single dot switches between two different ground states with gate and magnetic-field tuning, allowing for the switching of selection rules: with a spin-triplet-valley-singlet ground state, valley blockade is observed; and with the spin-singlet-valley-triplet ground state, robust spin blockade is shown.
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