Influence of an External Electric Field and Dissipative Tunneling on Recombination Radiation in Quantum Dots

The effect of an external electric field and dissipative tunneling on the spectral intensity of recombination radiation in a quantum dot with an A impurity complex (a hole localized on a neutral acceptor interacting with an electron localized in the ground state of the quantum dot) is studied in the zero-radius potential model in the adiabatic approximation. The probability of dissipative tunneling of a hole is calculated in the one-instanton approximation. A high sensitivity of the recombination radiation intensity to the strength of the external electric field and to such parameters of the surrounding matrix (dissipative tunneling parameters) as temperature, the constant of interaction with the contact medium (or the heat-bath), and the frequency of phonon modes, has been revealed. It is shown that an external electric field leads to a shift of the recombination radiation threshold by several tens of meV, and a change in the parameters of dissipative tunneling has a noticeable effect on the spectral intensity of recombination radiation. It is shown that the resonant tunneling effect manifests itself in the form of "dips" in the field dependence of the spectral intensity of recombination radiation, which occur at certain values of the external electric field strength and temperature. This opens up certain prospects for the use of the considered system "quantum dot-impurity complex A" under conditions of dissipative tunneling for the study and diagnostics of biological objects.