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Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Related Experiment Video

Updated: Oct 1, 2025

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions
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High-Performance Carbon Nanotube-Based Transient Complementary Electronics.

Fan Xia1,2, Tian Xia1,2, Li Xiang1,3

  • 1Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-Based Electronics, and School of Electronics, Peking University, Beijing 100871, China.

ACS Applied Materials & Interfaces
|March 1, 2022
PubMed
Summary
This summary is machine-generated.

High-performance transient complementary electronics were achieved using carbon nanotube thin films and electrostatic doping. These devices degrade completely, offering a sustainable solution for green electronics and secure hardware applications.

Keywords:
CMOScarbon nanotubeelectrostatic dopinghigh performancetransient

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Area of Science:

  • Materials Science
  • Electronics Engineering
  • Nanotechnology

Background:

  • Transient electronics offer environmentally friendly and secure applications but face material and fabrication limitations.
  • Complementary metal-oxide-semiconductor (CMOS) technology is desirable for transient electronics due to its efficiency and design advantages.
  • Current transient complementary electronics performance is hindered by limited material choices and fabrication methods.

Purpose of the Study:

  • To develop high-performance transient complementary electronics.
  • To explore carbon nanotube thin films and electrostatic doping for transient devices.
  • To demonstrate the feasibility of transient CMOS circuits with controlled degradation.

Main Methods:

  • Fabrication of transient complementary thin-film transistors (TFTs) using carbon nanotube films on a water-soluble substrate.
  • Utilizing a reliable electrostatic doping method for device operation.
  • Characterization of TFT performance, including on-state current, transconductance, subthreshold swing, and current on/off ratio.
  • Demonstration of transient CMOS inverters and assessment of their voltage gain and noise immunity.
  • Monitoring of component degradation and system disintegration over time.

Main Results:

  • Achieved high performance in p-type and n-type transient TFTs with width-normalized on-state currents of 4.5 and 4.7 μA/μm, respectively, at 2 V operating voltage.
  • Demonstrated small subthreshold swings (≤108 mV/dec) and high current on/off ratios (>10^6) with good uniformity.
  • Fabricated transient CMOS inverters exhibiting a voltage gain of 24 and noise immunity of 67.4%.
  • Observed complete degradation of active components within 10 hours and disintegration of the functional system within 5 hours, leaving no traceable remains.

Conclusions:

  • Successfully realized high-performance transient complementary electronics using carbon nanotube thin films and electrostatic doping.
  • Demonstrated the potential for transient CMOS circuits with excellent performance and controlled, complete degradation.
  • The developed technology shows promise for sustainable electronic applications, including green consumer electronics and hardware-secure devices.