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Related Concept Videos

Design Example: Resistive Touchscreen01:14

Design Example: Resistive Touchscreen

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A device engineer plays a crucial role in designing user interfaces for mobile devices. One such interface is the resistive touchscreen, which fundamentally consists of two metallic layers: a flexible upper layer and a rigid lower layer, separated by a narrow gap. The high resistance between these two layers is a key characteristic of this design.
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Related Experiment Video

Updated: Oct 1, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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Highly Reliable Flexible Device with a Charge Compensation Layer.

Hyojung Kim1,2, Jongwoo Park1, Taeyoung Khim1

  • 1Technology Reliability Team, OLED Business, Samsung Display Company, Limited, 181 Samsung-ro, Tangjeong-myeon, Asan-si 31454, Republic of Korea.

ACS Applied Materials & Interfaces
|March 2, 2022
PubMed
Summary

A new silicon oxycarbonitride (SiCOH) barrier material prevents device instabilities in flexible electronics. This innovation addresses threshold voltage shifts and image retention issues in polyimide-based devices, enabling more reliable foldable and stretchable displays.

Keywords:
Kelvin probe force microscopySIMSSiCOHa-IGZO devicedevice characterizationflexible electronic deviceimage stickingpolyimide substrate

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Area of Science:

  • Materials Science
  • Electronics Engineering
  • Display Technology

Background:

  • Flexible devices using polyimide (PI) substrates are crucial for advanced electronics.
  • Existing PI-based flexible devices face challenges like charge-induced instabilities and image retention.

Purpose of the Study:

  • To introduce a novel barrier material, SiCOH, to enhance the stability of flexible devices.
  • To investigate the effectiveness of SiCOH in mitigating device instabilities and image retention in a-IGZO TFTs.

Main Methods:

  • Incorporation of a SiCOH barrier layer into the backplane of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs).
  • Fabrication and testing of flexible panels with the new SiCOH barrier.
  • Evaluation of device performance, threshold voltage (Vth) shifts, and capacitance changes under bias stress.

Main Results:

  • The SiCOH layer effectively compensates for surface charging caused by fluorine ions at the PI substrate interface.
  • Abnormal positive shifts in threshold voltage (Vth) and image disturbance were prevented under bias stress.
  • a-IGZO TFTs and capacitors with SiCOH demonstrated reliable performance and suppressed Vth shifts.

Conclusions:

  • SiCOH is a viable barrier material for improving the reliability of flexible electronic devices.
  • This material significantly suppresses Vth shifts and image sticking issues in PI-based flexible displays.
  • The findings offer insights into process integrity and accelerate the development of versatile electronic form factors.