Symmetrically Ion-Gated In-Plane Metal-Oxide Transistors for Highly Sensitive and Low-Voltage Driven Bioelectronics

To provide a unique opportunity for on-chip scaled bioelectronics, a symmetrically gated metal-oxide electric double layer transistor (EDLT) with ion-gel (IG) gate dielectric and simple in-plane Corbino electrode architecture is proposed. Using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor and IG dielectric layers, low-voltage driven EDLTs with high ionotronic effects can be realized. More importantly, in contrast to the conventional asymmetric rectangular EDLTs which can cause non-uniform potential variation in the active channel layer and eventually degrade the sensing performance, the new symmetrical in-plane type EDLTs achieve high and spatially uniform ion responsive behaviors. The symmetrically gated a-IGZO EDLTs exhibited a responsivity of 129.4% to 5 ppm mercury (Hg²⁺ ) ions which are approximately three times higher than that with conventional electrode structure (responsivity of 38.5%). To confirm the viability of the new device architectures and the findings, the detailed mechanism of the symmetric gating effects in the in-plane EDLTs with a variety of electrical characterization and 3D fine element analysis simulations is also discussed.