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UV light exposure causes persistent darkening in copper-doped Gallium Oxide (β-Ga_{2}O_{3}) by converting Cu^{2+} to a rare Cu^{3+} state. This process involves hydrogen release from copper-hydrogen complexes, impacting optical and electronic properties.

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Semiconductor Physics

Background:

  • Gallium Oxide (β-Ga_{2}O_{3}) is an ultrawide band gap semiconductor.
  • Acceptor doping is crucial for creating semi-insulating β-Ga_{2}O_{3} substrates for advanced electronic devices.

Purpose of the Study:

  • Investigate the effects of UV light exposure on copper-doped β-Ga_{2}O_{3}.
  • Identify the mechanisms behind photo-induced darkening and associated spectroscopic changes.

Main Methods:

  • Electron paramagnetic resonance (EPR) spectroscopy to analyze copper oxidation states.
  • Infrared (IR) spectroscopy to detect vibrational modes.
  • Hybrid functional calculations to model defect complexes and their behavior.

Main Results:

  • UV light (>4 eV) induced significant and persistent photodarkening in Cu-doped β-Ga_{2}O_{3} at room temperature.
  • EPR confirmed the conversion of Cu^{2+} to Cu^{3+} upon light exposure.
  • IR spectra showed the emergence of O─H vibrational modes, indicating hydrogen involvement.

Conclusions:

  • The observed photodarkening is attributed to the formation of Cu^{3+} species.
  • Copper acceptors form complexes with hydrogen (Cu-H_{O}), which release hydrogen upon optical excitation.
  • This hydrogen release mechanism explains the simultaneous formation of Cu^{3+} and O─H modes, impacting material properties.