Native surface oxidation yields SiC-SiO₂ core-shell quantum dots with improved quantum efficiency

Silicon carbide is an important wide-bandgap semiconductor with wide applications in harsh environments and its applications rely on a reliable surface, with dry or wet oxidation to form an insulating layer at temperatures ranging from 850 to 1250 °C. Here, we report that the SiC quantum dots (QDs) with dimensions lying in the strong quantum confinement regime can be naturally oxidized at a much lower temperature of 220 °C to form core/shell and heteroepitaxial SiC/SiO₂ QDs with well crystallized silica nanoshells. The surface silica layer enhances the radiative transition rate of the core SiC QD by offering an ideal carrier potential barrier and diminishes the nonradiative transition rate by reducing the surface dangling bonds, and, as a result, the quantum yield is highly improved. The SiC/SiO₂ QDs are very stable in air, and they have better biocompatibility for cell-labeling than the bare SiC QDs. These results pave the way for constructing SiC-based nanoscale electronic and photonic devices.