Related Experiment Video
Updated: Oct 1, 2025

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
Published on: June 23, 2017
Neuromorphic behaviour in discontinuous metal films.
Saurabh K Bose1, Joshua B Mallinson1, Edoardo Galli1
1The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Physical and Chemical Sciences, University of Canterbury, Christchurch, New Zealand. simon.brown@canterbury.ac.nz.
Discontinuous metal films show brain-like electrical avalanches, mimicking neural activity. These films offer a promising, simple platform for developing brain-inspired computing technologies.
Area of Science:
- Materials Science
- Neuroscience
- Computer Science
Background:
- Neuromorphic computing aims to create brain-like computational systems.
- Understanding physical systems that mimic neural behavior is crucial for advancing this field.
Purpose of the Study:
- To investigate discontinuous metal films as a potential platform for neuromorphic computing.
- To analyze the electrical signal characteristics and underlying mechanisms in these films.
Main Methods:
- Fabrication of discontinuous metal films using simple evaporation.
- Experimental measurement of electrical signals and their avalanches.
- Analysis of atomic-scale switching processes.
- Numerical simulations and circuit modeling.
Main Results:
- Discontinuous metal films exhibit correlated electrical signal avalanches, similar to cortical activity.
- These signals meet established criteria for criticality.
- Atomic-scale switching processes mimic the integrate-and-fire mechanism of biological neurons.
- Switching event characteristics depend on network state and local position.
Conclusions:
- Discontinuous metal films demonstrate brain-like behavior and criticality.
- The observed switching mechanisms align with biological neural processes.
- These films represent a promising and accessible platform for brain-inspired computing.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

