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Published on: July 5, 2019
Dominating Interlayer Resonant Energy Transfer in Type-II 2D Heterostructure.
Arka Karmakar1, Abdullah Al-Mahboob1, Christopher E Petoukhoff1
1Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna, Kunigami District, Okinawa 904-0495, Japan.
In type-II heterostructures, nonradiative energy transfer (ET) can dominate over charge transfer (CT), significantly enhancing photoluminescence (PL) in materials like MoSe2. This finding offers new strategies for optoelectronic device design.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Type-II heterostructures (HSs) are critical for advanced electronics and optoelectronics.
- Interlayer charge transfer (CT) has been considered the primary carrier relaxation pathway in type-II transition metal dichalcogenide (TMD) HSs.
Purpose of the Study:
- To investigate the dominant carrier relaxation pathway in MoSe2/ReS2 type-II HSs.
- To explore the role of nonradiative energy transfer (ET) versus CT in TMD heterostructures.
- To demonstrate a method for enhancing photoluminescence (PL) intensity in TMD materials.
Main Methods:
- Fabrication of type-II heterostructures using MoSe2 and ReS2 monolayers.
- Experimental investigation with and without charge-blocking interlayers.
- Photoluminescence (PL) spectroscopy to analyze carrier dynamics and emission intensity.
Main Results:
- Nonradiative energy transfer (ET) from ReS2 to MoSe2 was found to dominate over CT in the MoSe2/ReS2 HS.
- Significant MoSe2 PL enhancement (3.6x without blocking, 6.4x encapsulated, >10x with CT blocked) was observed.
- In contrast, CT dominated over ET in ReS2/WSe2 HSs, leading to quenched WSe2 PL, confirming ET as a resonant effect.
Conclusions:
- The study reveals that ET can be the dominant interlayer process in specific type-II TMD HSs, challenging previous assumptions.
- Careful selection of materials for HSs can leverage ET to significantly boost desired PL emission.
- This provides a novel approach for enhancing optoelectronic device performance by controlling interlayer energy transfer mechanisms.
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