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Investigation of Warpage for Multi-Die Fan-Out Wafer-Level Packaging Process.

Chuan Chen1, Meiying Su1, Rui Ma1

  • 1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.

Materials (Basel, Switzerland)
|March 10, 2022
PubMed
Summary

This study analyzes wafer warpage in fan-out wafer-level packaging, finding that epoxy molding compound and carrier properties significantly impact it. Optimizing material thickness and thermal expansion reduces warpage for better manufacturing.

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Area of Science:

  • Materials Science
  • Mechanical Engineering
  • Semiconductor Manufacturing

Background:

  • Wafer warpage is a critical issue in advanced semiconductor packaging, affecting yield and reliability.
  • Fan-out wafer-level packaging (FOWLP) presents unique challenges due to its complex structure and materials.

Purpose of the Study:

  • To characterize the evolution of warpage in 12-inch RDL-first multi-die FOWLP.
  • To investigate the effects of epoxy molding compound (EMC) and carrier 2 on wafer warpage during manufacturing.

Main Methods:

  • Dynamic Mechanical Analysis (DMA) to characterize linear viscoelasticity of EMC and polyimide (PI) at various temperatures.
  • Finite Element Analysis (FEA) using elastic and viscoelastic models for PI and EMC.
  • Experimental validation of FEA results for wafer warpage prediction.
Keywords:
fan-out wafer-level packagingmulti-dieviscoelasticwarpage

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Main Results:

  • Viscoelastic properties of EMC in FEA improve wafer warpage prediction accuracy.
  • Molding process significantly influences wafer warpage.
  • FEA simulations revealed the impact of EMC and carrier 2 on warpage evolution.

Conclusions:

  • Optimizing EMC thickness, carrier 2 thickness, and material CTE matching can effectively reduce wafer warpage.
  • Accurate material property characterization is crucial for reliable warpage prediction in FOWLP.