Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Dielectric and Magnetic Spherical Hollow Shells Subjected to a dc or Low-Frequency ac Field of <i>Any</i> Spatial Form: Complete Theoretical Survey of All Scalar and Vector Physical Entities, Including the Depolarization Effect.

Materials (Basel, Switzerland)·2026
Same author

Flexoelectrically Induced Polar Topology in Twisted SrTiO<sub>3</sub> Membranes.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr.

Advanced materials (Deerfield Beach, Fla.)·2025
Same author

From Oxidized PrNi<sub>0.9</sub>Al<sub>0.1</sub>O<sub>3</sub> to Reduced PrNi<sub>0.9</sub>Al<sub>0.1</sub>O<sub>2+δ</sub> Perovskite Nickelates: Stabilization of Infinite-Layer Specimens with Monovalent Ni in the Bulk Polycrystalline Form.

Inorganic chemistry·2025
Same author

Lithium-Ion Conduction in Liquid-Crystalline Columnar Pd(II) Nanoassemblies.

ACS applied materials & interfaces·2025
Same author

Author Correction: Coherent coupling between vortex bound states and magnetic impurities in 2D layered superconductors.

Nature communications·2025

Related Experiment Video

Updated: Sep 30, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.6K

Impedance Spectroscopy of Encapsulated Single Graphene Layers.

Rainer Schmidt1,2, Félix Carrascoso Plana3, Norbert Marcel Nemes1,2,3

  • 1Campo Moncloa, Grupo de Física de Materiales Complejos (GFMC), Dpto. de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, 28040 Madrid, Spain.

Nanomaterials (Basel, Switzerland)
|March 10, 2022
PubMed
Summary

Electrical impedance spectroscopy (EIS) effectively separates dielectric components in graphene, distinguishing interface from intrinsic resistance in low-resistance layers. This method faces limitations with high-resistance graphene due to frequency constraints.

Keywords:
electrode resistanceimpedance spectroscopysingle-layer graphene

More Related Videos

Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

13.2K
Graphene Enclosure of Chemically Fixed Mammalian Cells for Liquid-Phase Electron Microscopy
10:12

Graphene Enclosure of Chemically Fixed Mammalian Cells for Liquid-Phase Electron Microscopy

Published on: September 21, 2020

7.2K

Related Experiment Videos

Last Updated: Sep 30, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.6K
Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

13.2K
Graphene Enclosure of Chemically Fixed Mammalian Cells for Liquid-Phase Electron Microscopy
10:12

Graphene Enclosure of Chemically Fixed Mammalian Cells for Liquid-Phase Electron Microscopy

Published on: September 21, 2020

7.2K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Electrical Engineering

Background:

  • Graphene's unique electronic properties make it promising for advanced electronic devices.
  • Understanding dielectric contributions in graphene is crucial for device performance and characterization.
  • Electrical Impedance Spectroscopy (EIS) is a powerful technique for probing electrical properties of materials.

Purpose of the Study:

  • To demonstrate the application of EIS for disentangling dielectric contributions in encapsulated single graphene layers.
  • To investigate the influence of graphene resistance on dielectric spectra.
  • To differentiate between electrode/graphene interface resistance and intrinsic graphene resistance.

Main Methods:

  • Utilizing Electrical Impedance Spectroscopy (EIS) to measure dielectric properties of encapsulated graphene.
  • Analyzing dielectric spectra qualitatively based on nominal graphene resistance.
  • Employing an equivalent circuit model for deconvolution of resistance components in low-resistance graphene.
  • Assessing the feasibility of deconvolution for high-resistance graphene layers.

Main Results:

  • Dielectric data show qualitative variations with nominal graphene resistance.
  • Inductive contributions dominate spectra for low-resistance graphene, enabling resistance disentanglement.
  • Capacitive contributions are prevalent in high-resistance graphene, limiting deconvolution due to EIS frequency limits.

Conclusions:

  • EIS is a viable technique for characterizing dielectric contributions in graphene.
  • The resistance of graphene layers significantly impacts the observed dielectric spectra.
  • The effectiveness of EIS for resistance deconvolution is dependent on the graphene layer's resistance and experimental frequency limits.